Dr. Sulagna Chatterjee

• PhD (Technology), Nanoscience & Nanotechnology (University of Calcutta)
• Tech. 1^st Class 1^st, Gold Medallist, Outstanding Academic Excellence Award, Radio Physics & Electronics, University of Calcutta
• Sc. Electronic Science, University of Calcutta

• Nanoscale strain modeling
• Low dimensional Quantum Mechanics
• Semiconductor Device Physics
• Band-structure and mobility engineering
• Modeling of coupled effect of strain and quantum confinement
• High frequency opto-electronic and bio-medical devices
• Si, III-V, II-VI and Graphene devices modeling (two and three terminal)
• Quantum Modeling of nanowire devices
• Modeling is done through self-designed in-house simulators

• Both two and three terminal nanoscale device physics modeling
• Strain modeling and engineering
• Quantum modeling of nanoscale devices
• Quantum modeling of optoelectronic devices
• Band structure engineering and band transition from indirect to direct
• Materials Science

• Experience of 6 years as Assistant Professor in ECE.

• Number of research papers published in SCI High Impact International refereed journals:12, 10 as first author
• Number of international Book-Chapters: 03

For Details, Visit: Google scholar: https://scholar.google.co.in/citations?user=7HTxtkgAAAAJ&hl=en

Orcid id: https://orcid.org/0000-0003-2615-0309

Selected Publication (s):

1. Sulagna Chatterjee and M. Mukherjee, “Band-engineered quasi-AlGaN/GaN high-electron-mobility-avalanche-transit time (HEMATT) oscillator: electro-optical interaction study in sub-mm frequency domain” European Physical Journal Plus, Volume:137: 343, 2022, https://doi.org/10.1140/epjp/s13360-022-02521-0. (impact factor: 3.911), ISSN: 2190-5444
2. Sulagna Chatterjee and M. Mukherjee, “High electron mobility effect in band-engineered GaN/quasi-AlGaN based exotic avalanche transit time diode arrays: application as ultrafast THz switches”, Microsystem Technologies, Volume: 28: 1059, 2022, https://doi.org/10.1007/s00542-022-05261-4. (impact factor: 2.276), Electronic ISSN: 1432-1858, Print ISSN: 0946-7076
3. Sulagna Chatterjee and M. Mukherjee, “Strained Si/Si_1-yC_y Superlattice based Quasi-Read Avalanche Transit-Time Devices for Terahertz Ultrafast Switches”, Applied Physics A, Volume: 127: 155, 2021, https://doi.org/10.1007/s00339-020-04187-w. (impact factor:1.82), Electronic ISSN:1432-0630, Print ISSN:0947-8396
4. Sulagna Chatterjee and M. Mukherjee, “Direct band gap silicon nanowire avalanche transit time thz opto‑electronic sensor with strain‑engineering”, Optical and Quantum Electronics, Volume: 52:488, 2020, https://doi.org/10.1007/s11082-020-02563-7. (impact factor: 1.842). Electronic ISSN: 1572-817X, Print ISSN:0306-8919
5. Sulagna Chatterjee and M. Mukherjee, “Strain-Engineered Asymmetrical Superlattice Si/Si_1-xGe_x Nano-ATT ⟨p++-n-n⁻-n++⟩ Oscillator: Enhanced Photo-Sensitivity in Terahertz Domain”,  IEEE Transactions on Electron Devices, Volume 66, Issue 8, pp. 3659 – 3667, July 2019, DOI:10.1109/TED.2019.2923108. (impact factor: 2.704), ISSN: 0018-9383
6. Sulagna Chatterjee, S. Sikdar, B. N. Chowdhury and S. Chattopadhyay, “Investigation of the performance of strain-engineered silicon nanowire field effect transistors (ɛ-Si-NWFET) on IOS substrates”, Journal of Applied Physics, Vol. 125, pp. 082506, 2019, https://doi.org/10.1063/1.5051310. (impact factor: 2.328), Print ISSN: 0021-8979, Online ISSN: 1089-7550.
7. Sulagna Chatterjee and S. Chattopadhyay, “Fraction of Insertion of the Channel-Fin as Performance Booster in Strain-Engineered p-FinFET Devices with Insulator-on-Silicon (IOS) Substrate”, IEEE Transactions on Electron Devices, Vol. 65, Issue. 2, pp. 411 – 418, 2018, DOI: 10.1109/TED.2017.2781264. (impact factor: 2.605), ISSN: 0018-9383
8. Sulagna Chatterjee and S. Chattopadhyay, “Analytical modeling of the lattice and thermo-elastic coefficient mismatch-induced stress into silicon nanowires horizontally embedded on insulator-on-silicon substrates”, Superlattices and Microstructures, Vol. 101Vol. 125, pp. 082506, 2019, https://doi.org/10.1063/1.5051310. (impact factor: 2.328), Print ISSN: 0021-8979, Online ISSN: 1089-7550.
9. Sulagna Chatterjee and S. Chattopadhyay, “Modeling and estimation of process-induced stress in the nanowire field-effect-transistors (NW-FETs) on insulator-on-silicon substrates with high-k gate-dielectrics”, Superlattices and Microstructures, Vol. 98, pp. 194-202, Oct. 2016, https://doi.org/10.1016/j.spmi.2016.08.022. (impact factor: 2.123), ISSN: 0749-6036.
10. Sulagna Chatterjee, B. N. Chowdhury, A. Das and S. Chattopadhyay, “Estimation of step-by-step induced stress in a sequential process integration of nano-scale SOS MOSFETs with high-k gate dielectrics”, Semiconductor Science and Technology, Vol. 28, pp. 125011, Nov. 2013.(impact factor:1.92), https://doi.org/10.1088/0268-1242/28/12/125011, Online ISSN: 1361-6641, Print ISSN: 0268-1242.

Academic achievements:

• Gold medal for 1^st class 1^st in M. Tech. (Radio physics and Electronics) from University of Calcutta.
• Pareshlal Dhar Bhowmick Book Award for Outstanding Academic Excellence in University of Calcutta.
• National Merit Scholarship for B. Sc. (Electronics Honours, Physics and Mathematics) from Govt. of India.
• Best paper in international Science and Technology Congress, IEM, 2014.
• Best paper in Science and Technology from Saha Institute of Nuclear Physics, West Bengal Science Congress, Govt. of India, 2012.
• Awarded by Institute of Scholars, InSc, Bengaluru for outstanding achievements in various categories, 2020:
  1. Young Achiever
  2. Best Teacher
  3. Research Excellence
  4. Academic Excellence
• Global Teaching Excellence Award for Contribution to the Education Community, GTEA 2020.
• Certificate of Excellence in Reviewing for outstanding contribution to the quality of the journal for TWO consecutive years: Journal of Engineering Research and Reports, 2020, 2021 and 2022.

Awarded Scholarships: 

• Council of Scientific and Industrial Research (Csir) (SRF-NET) (Senior Research Fellowship) (Govt. of India) for Ph.D.
• Dept. of Science and Technology (dst) Scholarship (Govt. of India) for Ph.D.
• I.i.t. institute Fellowship for Ph.D. in the Dept. of Electronics and Electrical Communication Engineering (I.i.t. Kharagpur).
• National Merit Scholarship in B. Sc. from Govt. of India.
• Awarded UGC grant scholarship for M.Tech project.

Reviewer for refereed international journals:

• IEEE Transactions on Electron Devices
• IEEE Transactions on Consumer Electronics
• IEEE Transactions on Materials and Reliability
• Materials and Design (Elsevier) (impact factor: 5.77).
• Journal of Applied Physics (impact factor: 2.328).
• International Journal of Applied and Computational Mathematics (IACM) (Springer) (h5 index: 13).
• Journal of Engineering Research and Reports, received Certificate of Excellence in Reviewing for outstanding contribution to the quality of the journal, 2020.
• Advances in Science, Technology and Engineering Systems Journal (ASTESJ) (ISSN: 2415-6698) for
  1. Nano Science and Technology
  2. Applied Physics
  3. Materials Science
  4. Electronics Engineering
• Institute of Scholars, InSc, Bengaluru.
• Reviewer for IEEE(EDS), Delhi Chapter Supported: Micro2020:7th International Conference on Microelectronics, Circuits and Systems.
• Reviewer for IEEE International Conference on Electrical, Computer, and Energy Technologies (ICECET’21) which will take place in Cape Town, South Africa on 09-10 December 2021.
• Reviewer for INDICON-2021 (2021 IEEE 18th India Council International Conference (INDICON)).